Author Affiliations
Abstract
1 Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubicehttps://ror.org/01chzd453, Pardubice, Czech Republic
2 Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)–UMR 6226, F-35000 Rennes, France
3 e-mail: tomas.halenkovic@upce.cz
4 e-mail: petr.nemec@upce.cz
The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary thin films, was studied. The study of time evolution of the absorption coefficient upon room-temperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.
Photonics Research
2022, 10(9): 2261
Author Affiliations
Abstract
1 Key Laboratory of Chemical Laser, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
2 Institut des Sciences Chimiques de Rennes,équipe Verres et Céramiques, Université de Rennes, Rennes 35042, France
3 Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice 53210, Czech Republic
Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65(doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.
光电子快报（英文版）
2016, 12(3): 199
